Gaquiere, C.: search on Z-Library

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1

A 10-MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications

Gamand, Florent, Li, Ming Dong, Gaquiere, Christophe

Journal:

IEEE Transactions on Circuits and Systems II: Express Briefs

Year:

2012

Language:

english

File:

PDF, 860 KB

english, 2012

2

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

A. Santarelli, V. Di Giacomo, A. Raffo, F. Filicori, G. Vannini, R. Aubry, C. Gaquière

Journal:

International Journal of RF and Microwave Computer-Aided Engineering

Year:

2008

Language:

english

File:

PDF, 395 KB

english, 2008

3

Diamond overgrown InAlN/GaN HEMT

Alomari, M., Dipalo, M., Rossi, S., Diforte-Poisson, M.-A., Delage, S., Carlin, J.-F., Grandjean, N., Gaquiere, C., Toth, L., Pecz, B., Kohn, E.

Journal:

Diamond and Related Materials

Year:

2011

Language:

english

File:

PDF, 1.07 MB

english, 2011

4

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates

N. Sghaier, M. Trabelsi, N. Yacoubi, J.M. Bluet, A. Souifi, G. Guillot, C. Gaquière, J.C. DeJaeger

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 397 KB

english, 2006

5

A 10 dBm Output Power D-Band Power Source With 5 dB Conversion Gain in BiCMOS 55nm

Bossuet, Alice, Quemerais, Thomas, Gaquiere, Christophe, Lauga-Larroze, Estelle, Fournier, Jean-Michel, Lepilliet, Sylvie, Gloria, Daniel

Journal:

IEEE Microwave and Wireless Components Letters

Year:

2016

Language:

english

File:

PDF, 883 KB

english, 2016

6

MBE growth of ALGaN/GaN HEMTS on resistive Si(1 1 1) substrate with RF small signal and power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. DeJaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J-C.

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 230 KB

english, 2003

7

Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors

Alim, Mohammad A, Rezazadeh, Ali A, Gaquiere, Christophe

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 2.03 MB

english, 2016

8

Electromechanical Transconductance Properties of a GaN MEMS Resonator With Fully Integrated HEMT Transducers

Faucher, M., Cordier, Y., Werquin, M., Buchaillot, L., Gaquiere, C., Theron, D.

Journal:

Journal of Microelectromechanical Systems

Year:

2012

Language:

english

File:

PDF, 713 KB

english, 2012

9

[IEEE 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013 - Seattle, WA, USA (2013.06.2-2013.06.7)] 2013 IEEE MTT-S International Microwave Symposium Digest (MTT) - Pulsed power operation of power limiters integrating a phase transition material

Crunteanu, A., Lemoine, E., Leroy, J., Passerieux, D., Leveque, P., Blondy, P., Gaquiere, C., Ducatteau, D., Orlianges, J., Champeaux, C.

Year:

2013

File:

PDF, 288 KB

2013

10

[IEEE 2007 IEEE Instrumentation & Measurement Technology Conference IMTC 2007 - Warsaw, Poland (2007.05.1-2007.05.3)] 2007 IEEE Instrumentation & Measurement Technology Conference IMTC 2007 - Non Linear RF Device Characterization in Time Domain using an Active Loadpull Large Signal Network Analyzer

Ducatteau, D., Werquin, M., Grimbert, B., Morvan, E., Theron, D., Gaquiere, C.

Year:

2007

Language:

english

File:

PDF, 2.03 MB

english, 2007

11

LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

M.-A. di Forte Poisson, N. Sarazin, M. Magis, M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. Georgakilas, P. Kominou, M. Guziewicz, E. Kaminska, A. Piotrowska, C. Gaquière, M. Oualli, E. Char

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 849 KB

english, 2010

12

[IEEE 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Portland, OR, USA (2012.09.30-2012.10.3)] 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs

Canderle, E., Chevalier, P., Montagne, A., Moynet, L., Avenier, G., Boulenc, P., Buczko, M., Carminati, Y., Rosa, J., Gaquiere, C., Chantre, A.

Year:

2012

Language:

english

File:

PDF, 613 KB

english, 2012

13

[IEEE 2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC) - Brive La Gaillarde, France (2018.7.5-2018.7.6)] 2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC) - A Fully In-Situ Reflectometer in G band in 55 nm SiGe BiCMOS

Aouimeur, W., Lepilliet, S., Gaquiere, C., Lauga-Larroze, E., Arnould, J.-D., Moron-Guerra, J., Quemerais, T., Gloria, D., Serhan, A.

Year:

2018

Language:

english

File:

PDF, 7.50 MB

english, 2018

14

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

Boulay, S., Touati, S., Sar, A.A., Hoel, V., Gaquiere, C., De Jaeger, J.-C., Joblot, S., Cordier, Y., Semond, F., Massies, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 828 KB

english, 2007

15

Testing the Temperature Limits of GaN-Based HEMT Devices

Maier, David, Alomari, Mohammed, Grandjean, Nicolas, Carlin, Jean-Francois, Diforte-Poisson, Marie-Antoinette, Dua, Christian, Chuvilin, Andrey, Troadec, David, Gaquiere, Christophe, Kaiser, Ute, Dela

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2010

Language:

english

File:

PDF, 911 KB

english, 2010

16

[IEEE IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO - London, UK (24-25 Nov. 1997)] IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) - Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FETs

Theron, D., Boudart, B., Gaquiere, C., Salmer, G., Lipka, K.M., Splingart, B., Kohn, E.

Year:

1997

Language:

english

File:

PDF, 499 KB

english, 1997

17

[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - Improvement of the RF power performance of nLDMOSFETs on bulk and SOI substrates with ‘ribbon’ gate and source contacts layouts

Fournier, D., Ducatteau, D., Fontaine, J., Scheer, P., Bon, O., Rauber, B., Buczko, M., Gloria, D., Gaquiere, C., Chevalier, P.

Year:

2009

Language:

english

File:

PDF, 613 KB

english, 2009

18

[IEEE IEEE MTT-S International Microwave Symposium - IMS 2003 - Philadelphia, PA, USA (8-13 June 2003)] IEEE MTT-S International Microwave Symposium Digest, 2003 - ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements

Schreurs, D., Verspecht, J., Vandamme, E., Vellas, N., Gaquiere, C., Germain, M., Borghs, G.

Year:

2003

Language:

english

File:

PDF, 269 KB

english, 2003

19

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, B. Grimbert, J. Fontaine, C. gaquiere, H. Maaref

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 312 KB

english, 2011

20

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Millithaler, J.-F., Iñiguez-de-la-Torre, I., Iñiguez-de-la-Torre, A., González, T., Sangaré, P., Ducournau, G., Gaquière, C., Mateos, J.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.45 MB

english, 2014

21

[IEEE 2015 European Microwave Conference (EuMC 2015) - Paris, France (2015.9.7-2015.9.10)] 2015 European Microwave Conference (EuMC) - Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

Alim, Mohammad A, Rezazadeh, Ali A, Gaquiere, Christophe, Ali, Mayahsa M, Zhang, Yongjian, Haris, Norshakila, Kyabaggu, Peter B

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

22

Measurement of Self-Heating Temperature in AlGaN/GaN HEMTs by Using Cerium Oxide Micro-Raman Thermometers

Brocero, G., Guhel, Y., Eudeline, P., Sipma, J. P., Gaquiere, C., Boudart, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.09 MB

english, 2019

23

Small signal modeling of HEMTs AlGaN/GaN/SiC for sensor and high-temperature applications

Helali, Abdelhamid, Nouira, Wided, Gassoumi, Moujahed, Gassoumi, Malek, Gaquière, Christophe, Maaref, Hassen

Journal:

Optik - International Journal for Light and Electron Optics

Year:

2016

Language:

english

File:

PDF, 1.14 MB

english, 2016

24

[IEEE 2017 International Conference on Noise and Fluctuations (ICNF) - Vilnius, Lithuania (2017.6.20-2017.6.23)] 2017 International Conference on Noise and Fluctuations (ICNF) - Noise parameters of SiGe HBTs in mmW range: towards a full in situ measurement extraction

Danneville, F., Deng, M., Bouvot, S., Goncalves, J. Azevedo, Lepilliet, S., Ducournau, G., Gaquiere, C., Dambrine, G., Bossuet, A., Quemerais, T., Lauga-Larroze, G. E., Fournier, J-M, Chevalier, P., G

Year:

2017

Language:

english

File:

PDF, 628 KB

english, 2017

25

Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy

M. Gassoumi, J.M. Bluet, F. Chekir, I. Dermoul, H. Maaref, G. Guillot, A. Minko, V. Hoel, C. Gaquière

Journal:

Materials Science and Engineering: C

Year:

2006

Language:

english

File:

PDF, 199 KB

english, 2006

26

Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions

Baczkowski, Leny, Jacquet, Jean-Claude, Jardel, Olivier, Gaquiere, Chistophe, Moreau, Myriam, Carisetti, Dominique, Brunel, Laurent, Vouzelaud, Franck, Mancuso, Yves

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.76 MB

english, 2015

27

[IEEE 2015 10th European Microwave Integrated Circuits Conference (EuMIC) - Paris, France (2015.9.7-2015.9.8)] 2015 10th European Microwave Integrated Circuits Conference (EuMIC) - 0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range

Alim, Mohammad A, Rezazadeh, Ali A, Gaquiere, Christophe, Ali, Mayahsa M, Haris, Norshakila, Kyabaggu, Peter B, Zhang, Yongjian

Year:

2015

Language:

english

File:

PDF, 791 KB

english, 2015

28

[IEEE 2014 44th European Microwave Conference (EuMC) - Rome (2014.10.6-2014.10.9)] 2014 44th European Microwave Conference - Zero-bias GaN implanted Self-Switching Diode coupled with bow-tie antenna for THz applications

Sangare, Paul, Ducournau, Guillaume, Grimbert, Bertrand, Faucher, Marc, Gaquiere, Christophe

Year:

2014

Language:

english

File:

PDF, 1.25 MB

english, 2014

29

Highly Tunable High- Q Inversion-Mode MOS Varactor in the 1â325-GHz Band

Margalef-Rovira, Marc, Saadi, Abdelhalim A., Vincent, Loic, Lepilliet, Sylvie, Gaquiere, Christophe, Gloria, Daniel, Durand, Cedric, Barragan, Manuel J., Pistono, Emmanuel, Bourdel, Sylvain, Ferrari,

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 1.46 MB

2020

30

Characterization of GaAs and InGaAs double-quantum well heterostructure FETs

Theron, D., Bonte, B., Gaquiere, C., Playez, E., Crosnier, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 657 KB

english, 1993

31

Power measurement setup for large signal microwave characterization at 94 GHz

Medjdoub, F., Vandenbrouck, S., Gaquiere, C., Delos, E., Zaknoune, M., Theron, D.

Journal:

IEEE Microwave and Wireless Components Letters

Year:

2006

Language:

english

File:

PDF, 116 KB

english, 2006

32

Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications

Alim, Mohammad A., Ali, Mayahsa M., Rezazadeh, Ali A., Gaquiere, C.

Journal:

Microelectronic Engineering

Year:

2019

Language:

english

File:

PDF, 969 KB

english, 2019

33

Influence of neutron irradiation on electron traps induced by NGB stress in AlInN/GaN HEMTs

Petitdidier, Sebastien, Guhel, Yannick, Brocero, Guillaume, Eudeline, Philippe, Trolet, Jean-Lionel, Mary, Patrick, Gaquiere, Christophe, Boudart, Bertrand

Journal:

IEEE Transactions on Nuclear Science

Year:

2017

Language:

english

File:

PDF, 1.39 MB

english, 2017

34

Enhancement-mode Al0.66In0.34As/Ga0.67 In0.33As metamorphic HEMT, modeling and measurements

Boudrissa, M., Delos, E., Gaquiere, C., Rousseau, M., Cordier, Y., Theron, D., Jaeger, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 229 KB

english, 2001

35

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

Alim, Mohammad A, Rezazadeh, Ali A, Gaquiere, Christophe

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 4.12 MB

english, 2015

36

On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors

Daffe, K., Dambrine, G., Durand, C., Gaquiere, C., Haddadi, K.

Journal:

IEEE Microwave and Wireless Components Letters

Year:

2018

Language:

english

File:

PDF, 919 KB

english, 2018

37

Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates

A. Curutchet, N. Malbert, N. Labat, A Touboul, C. Gaquière, A. Minko, M. Uren

Journal:

Microelectronics Reliability

Year:

2003

File:

PDF, 1.28 MB

2003

38

Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors

Saidi, I., Gassoumi, M., Maaref, H., Mejri, H., Gaquiere, C.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 468 KB

english, 2009

39

[IEEE Technology of Integrated Systems in Nanoscale Era (DTIS) - Hammamet, Tunisia (2010.03.23-2010.03.25)] 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era - Investigation of deep levels in AlGaN/GaN HEMTs on silicon substrate by conductance deep level transient spectroscopy

Mosbahi, H., Gassoumi, M., Charfeddine, M., Gaquiere, C., Zaidi, M.A., Maaref, H.

Year:

2010

Language:

english

File:

PDF, 290 KB

english, 2010

40

Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate

M. Gassoumi, J.M. Bluet, C. Gaquière, G. Guillot, H. Maaref

Journal:

Microelectronics Journal

Year:

2009

Language:

english

File:

PDF, 291 KB

english, 2009

41

[IEEE 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - La Jolla, CA, USA (2012.10.14-2012.10.17)] 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - 160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management

Piotrowicz, S., Jardel, O., Jacquet, J.-C., Lancereau, D., Aubry, R., Morvan, E., Sarazin, N., Dufraisse, J., Dua, C., Oualli, M., Chartier, E., Poisson, M. A. Di-Forte, Gaquière, C., Delage, S. L.

Year:

2012

Language:

english

File:

PDF, 488 KB

english, 2012

42

Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Vanessa Sbrugnera, Bertrand Grimbert, Christophe Gaquière

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 1.12 MB

english, 2012

43

Cl 2 /Ar based atomic layer etching of AlGaN layers

Aroulanda, Sébastien, Patard, Olivier, Altuntas, Philippe, Michel, Nicolas, Pereira, Jorge, Lacam, Cédric, Gamarra, Piero, Delage, Sylvain L., Defrance, Nicolas, de Jaeger, Jean-Claude, Gaquière, Chri

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2019

Language:

english

File:

PDF, 588 KB

english, 2019

44

Thermal response and correlation between mobility and kink effect in GaN HEMTs

Alim, Mohammad A., Afrin, S., Rezazadeh, A.A., Gaquiere, C.

Journal:

Microelectronic Engineering

Year:

2020

Language:

english

File:

PDF, 902 KB

english, 2020

45

Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence

F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J.L. Trolet, M. Piccione, C. Gaquière

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 825 KB

english, 2012

46

[IEEE 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) - Cardiff, United Kingdom (2020.7.16-2020.7.17)] 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) - Power Measurement Setup Development for On-Wafer Characterization at 185â191 GHz

Maye, Caroline, Lepilliet, Sylvie, Okada, Etienne, Gloria, Daniel, Ducournau, Guillaume, Gaquiere, Christophe

Year:

2020

File:

PDF, 691 KB

2020

47

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

El Fatimy, A., Dyakonova, N., Meziani, Y., Otsuji, T., Knap, W., Vandenbrouk, S., Madjour, K., TheÌron, D., Gaquiere, C., Poisson, M. A., Delage, S., Prystawko, P., Skierbiszewski, C.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 501 KB

english, 2010

48

Spatial Power Combiner With Low-Impedance Inputs and Increased Isolation

Theveneau, Hadrien, Gaquiere, Christophe, Lenglet, Romain, Werquin, Matthieu, Joly, Jean-Christophe, Tortel, Stephane

Journal:

IEEE Microwave and Wireless Components Letters

Year:

2017

Language:

english

File:

PDF, 958 KB

english, 2017

49

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

Fathallah, O., Gassoumi, M., Grimbert, B., Gaquière, C., Maaref, H.

Journal:

The European Physical Journal Applied Physics

Year:

2010

Language:

english

File:

PDF, 411 KB

english, 2010

50

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4by CDLTS

M. Gassoumi, B. Grimbert, C. Gaquiere, H. Maaref

Journal:

Year:

2012

Language:

english

File:

PDF, 222 KB

english, 2012

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